PART |
Description |
Maker |
GT8G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS)
|
Toshiba Semiconductor
|
2SC4685 E000978 |
NPN EPITAXIAL TYPE (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) From old datasheet system STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
2SA1327A 2SA1327A06 |
Strobe Flash Applications Audio Power Amplifier Applications
|
Toshiba Semiconductor
|
2SC4683 |
STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
2SA116009 |
Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
2SA1242 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications
|
TOSHIBA
|
2SC503004 |
Strobe Flash Applications
|
Toshiba Semiconductor
|
GT8G13206 GT8G132 |
Strobe Flash Applications
|
Toshiba Semiconductor
|
GT5G13106 |
Strobe Flash Applications
|
Toshiba Semiconductor
|
GT8G12106 |
STROBE FLASH APPLICATIONS
|
Toshiba Semiconductor
|